发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13240983申请日： 2011-09-22
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公开(公告)号： US20120007219A1公开(公告)日： 2012-01-12
- 发明人: Jong-Bum PARK , Han-Sang SONG , Jong-Kook PARK
- 申请人： Jong-Bum PARK , Han-Sang SONG , Jong-Kook PARK
- 申请人地址： KR Icheon-si
- 专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人： HYNIX SEMICONDUCTOR INC.
- 当前专利权人地址： KR Icheon-si
- 优先权： KR10-2008-0047082 20080521
- 主分类号： H01L29/41
- IPC分类号： H01L29/41
摘要：
A semiconductor device, includes: a first storage node contact plug penetrating a first interlayer insulation layer and partially protruding above the first interlayer insulation layer; a second storage node contact plug contacting the first storage node contact plug that protrudes above the first interlayer insulation layer; a storage node contacting a top surface of the second storage node contact plug; and a second interlayer insulation layer formed over the first interlayer insulation layer, wherein the second interlayer insulation layer surrounds an outer sidewall at a bottom region of the first storage node, and the second storage node contact plug, and wherein the first storage node contact plug protruding above the first interlayer insulation layer and the second storage node contact plug.