Invention Application
- Patent Title: METAL WIRE FOR A SEMICONDUCTOR DEVICE FORMED WITH A METAL LAYER WITHOUT VOIDS THEREIN AND A METHOD FOR FORMING THE SAME
- Patent Title (中): 用于形成具有无电荷的金属层的半导体器件的金属线及其形成方法
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Application No.: US13238570Application Date: 2011-09-21
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Publication No.: US20120007240A1Publication Date: 2012-01-12
- Inventor: Dong Ha JUNG , Baek Mann KIM , Soo Hyun KIM , Young Jin LEE , Sun Woo HWANG , Jeong Tae KIM
- Applicant: Dong Ha JUNG , Baek Mann KIM , Soo Hyun KIM , Young Jin LEE , Sun Woo HWANG , Jeong Tae KIM
- Applicant Address: KR Kyoungki-do
- Assignee: HYNIX SEMICONDUCTOR INC.
- Current Assignee: HYNIX SEMICONDUCTOR INC.
- Current Assignee Address: KR Kyoungki-do
- Priority: KR10-2006-0137200 20061228
- Main IPC: H01L23/535
- IPC: H01L23/535
Abstract:
A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2 layer formed on a surface of the damascene pattern and an Al deposit-inhibiting layer formed on a portion of the RuO2 layer in both-side upper portion of the damascene pattern; and a wiring metal layer including Al formed on the diffusion barrier layer by MOCVD method in order to fill the damascene pattern.
Public/Granted literature
Information query
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