发明申请
US20120008655A1 HEAT SINK, METHOD OF PRODUCING SAME, AND SEMICONDUCTOR LASER DEVICE
审中-公开
散热器，其制造方法和半导体激光器件
- 专利标题： HEAT SINK, METHOD OF PRODUCING SAME, AND SEMICONDUCTOR LASER DEVICE
- 专利标题（中）： 散热器，其制造方法和半导体激光器件
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申请号： US13154073申请日： 2011-06-06
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公开(公告)号： US20120008655A1公开(公告)日： 2012-01-12
- 发明人: Yoshiaki Niwa
- 申请人： Yoshiaki Niwa
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 优先权： JP2010-155836 20100708
- 主分类号： H01S3/04
- IPC分类号： H01S3/04 ; B21D53/02 ; F28F7/00
摘要：
A heat sink enabled to prevent structural deterioration of an inner wall of a flow channel caused by corrosion a semiconductor laser device are provided. The heat sink includes a main body, a flow channel which is provided in the main body, and inside which a cooling medium passes through, and a passivation film covering an inner-wall surface of the flow channel.
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