发明申请
- 专利标题: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING SHARED BIT LINE STRUCTURE
- 专利标题(中): 制造具有共享位线结构的半导体器件的方法
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申请号: US13236751申请日: 2011-09-20
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公开(公告)号: US20120009759A1公开(公告)日: 2012-01-12
- 发明人: Dong-hoon JANG , Young-bae Yoon , Hee-soo Kang , Young-seop Rah , Jeong-dong Choe
- 申请人: Dong-hoon JANG , Young-bae Yoon , Hee-soo Kang , Young-seop Rah , Jeong-dong Choe
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2008-0059781 20080624
- 主分类号: H01L21/76
- IPC分类号: H01L21/76
摘要:
A semiconductor device, including a substrate having first and second active regions, the first and second active regions being disposed on opposite sides of an isolation structure, and a bit line electrically coupled to a contact plug that is on the isolation structure between the first active region and the second active region, and electrically coupled to an active bridge pattern directly contacting at least one of the first and second active regions, wherein the contact plug is electrically coupled to the first active region and the second active region, and a bottom surface of the active bridge pattern is below a top surface of the first and second active regions.
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