发明申请
- 专利标题： METHOD FOR MAKING A DISILICIDE
- 专利标题（中）： 制造杀虫剂的方法
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申请号： US12836026申请日： 2010-07-14
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公开(公告)号： US20120012903A1公开(公告)日： 2012-01-19
- 发明人: Chun-Wen NIEH , Hung-Chang HSU , Wen-Chi TSAI , Mei-Yun WANG , Chii-Ming WU , Wei-Jung LIN , Chih-Wei CHANG
- 申请人： Chun-Wen NIEH , Hung-Chang HSU , Wen-Chi TSAI , Mei-Yun WANG , Chii-Ming WU , Wei-Jung LIN , Chih-Wei CHANG
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the metal-rich silicide and/or the mono-silicide to form a di-silicide with limited spikes at the interface between the silicide and substrate. The di-silicide has an additive which can lower the electron Schottky barrier height.
公开/授权文献
- US08304319B2 Method for making a disilicide 公开/授权日：2012-11-06
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