发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13078436申请日： 2011-04-01
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公开(公告)号： US20120012947A1公开(公告)日： 2012-01-19
- 发明人: Shigeto FUJITA , Khalid Hassan Hussein , Junichi Yamashita , Hisao Kondo
- 申请人： Shigeto FUJITA , Khalid Hassan Hussein , Junichi Yamashita , Hisao Kondo
- 申请人地址： JP Chiyoda-ku
- 专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人： MITSUBISHI ELECTRIC CORPORATION
- 当前专利权人地址： JP Chiyoda-ku
- 优先权： JP2010-160544 20100715
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device includes a gate pad, a gate wiring conductor connected to the gate pad, and a gate electrode formed under the gate pad and the gate wiring conductor. Portions of the gate electrode closer to the gate pad have a higher resistance per unit area than portions of the gate electrode farther away from the gate pad.
公开/授权文献
- US08350319B2 Semiconductor device 公开/授权日：2013-01-08
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