发明申请
- 专利标题： METHOD OF MAINTAINING THE STATE OF SEMICONDUCTOR MEMORY HAVING ELECTRICALLY FLOATING BODY TRANSISTOR
- 专利标题（中）： 维持电动浮体的晶体管半导体存储器状态的方法
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申请号： US13244855申请日： 2011-09-26
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公开(公告)号： US20120014188A1公开(公告)日： 2012-01-19
- 发明人: Yuniarto Widjaja , Zvi Or-Bach
- 申请人： Yuniarto Widjaja , Zvi Or-Bach
- 主分类号： G11C7/10
- IPC分类号： G11C7/10 ; G11C11/402 ; G11C7/00
摘要：
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.
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