Invention Application
US20120015510A1 METHOD OF FABRICATING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLANTATION AT A TILT ANGLE IN EXPOSED REGIONS
审中-公开
制造半导体器件的方法，包括在暴露区域的斜角处的离子植入
- Patent Title: METHOD OF FABRICATING A SEMICONDUCTOR DEVICE INCLUDING ION IMPLANTATION AT A TILT ANGLE IN EXPOSED REGIONS
- Patent Title (中): 制造半导体器件的方法，包括在暴露区域的斜角处的离子植入
-
Application No.: US13186324Application Date: 2011-07-19
-
Publication No.: US20120015510A1Publication Date: 2012-01-19
- Inventor: Min Yong LEE , Yong Soo Jung
- Applicant: Min Yong LEE , Yong Soo Jung
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2006-0137138 20061228
- Main IPC: H01L21/425
- IPC: H01L21/425
Abstract:
A method of fabricating a semiconductor device includes forming a mask pattern for defining a region of a semiconductor substrate. A field stop dopant layer will be formed in the defined region. Dopant ions are implanted into the defined region of the semiconductor substrate at a tilt angle of approximately 4.4° to 7°.
Information query
IPC分类:
