发明申请
- 专利标题: RADIATION-EMITTING SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING A RADIATION-EMITTING SEMICONDUCTOR CHIP
- 专利标题(中): 辐射发射半导体芯片和产生辐射发射半导体芯片的方法
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申请号: US12922736申请日: 2009-06-25
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公开(公告)号: US20120018763A1公开(公告)日: 2012-01-26
- 发明人: Karl Engl , Berthold Hahn , Klaus Streubel , Markus Klein
- 申请人: Karl Engl , Berthold Hahn , Klaus Streubel , Markus Klein
- 申请人地址: DE Regensburg
- 专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人: OSRAM Opto Semiconductors GmbH
- 当前专利权人地址: DE Regensburg
- 优先权: DE102008034560.1 20080724
- 国际申请: PCT/DE2009/000885 WO 20090625
- 主分类号: H01L33/62
- IPC分类号: H01L33/62
摘要:
A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.
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