发明申请
- 专利标题： FINFET SEMICONDUCTOR DEVICE
- 专利标题（中）： FINFET半导体器件
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申请号： US13247507申请日： 2011-09-28
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公开(公告)号： US20120018785A1公开(公告)日： 2012-01-26
- 发明人: Jeff J. Xu
- 申请人： Jeff J. Xu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")
- 当前专利权人地址： TW Hsin-Chu
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
The present disclosure provides a FinFET element. The FinFET element includes a germanium-FinFET element (e.g., a multi-gate device including a Ge-fin). In one embodiment, device includes a fin having a first portion including Ge and a second portion, underlying the first portion and including an insulating material (e.g., silicon dioxide). A gate structure may be formed on the fin.
公开/授权文献
- US08648400B2 FinFET semiconductor device with germanium (GE) fins 公开/授权日：2014-02-11
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