发明申请
- 专利标题: SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR STORAGE DEVICE
- 专利标题(中): 半导体器件,其制造方法和半导体存储器件
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申请号: US13145108申请日: 2010-01-18
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公开(公告)号: US20120018807A1公开(公告)日: 2012-01-26
- 发明人: Ryuta Tsuchiya , Nobuyuki Sugii , Yusuke Morita , Hiroyuki Yoshimoto , Takashi Ishigaki , Shinichiro Kimura
- 申请人: Ryuta Tsuchiya , Nobuyuki Sugii , Yusuke Morita , Hiroyuki Yoshimoto , Takashi Ishigaki , Shinichiro Kimura
- 申请人地址: JP Tokyo
- 专利权人: HITACHI, LTD.
- 当前专利权人: HITACHI, LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2009-008850 20090119
- 国际申请: PCT/JP2010/000236 WO 20100118
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; B82Y99/00
摘要:
In an SOI-MISFET that operates with low power consumption at a high speed, an element area is reduced. While a diffusion layer region of an N-conductivity type MISFET region of the SOI type MISFET and a diffusion layer region of a P-conductivity type MISFET region of the SOI type MISFET are formed as a common region, well diffusion layers that apply substrate potentials to the N-conductivity type MISFET region and the P-conductivity type MISFET region are separated from each other by an STI layer. The diffusion layer regions that are located in the N- and P-conductivity type MISFET regions) and serve as an output portion of a CMISFET are formed as a common region and directly connected by silicified metal so that the element area is reduced.