发明申请
US20120019496A1 OPTICAL SENSOR CIRCUIT, DISPLAY DEVICE AND METHOD FOR DRIVING OPTICAL SENSOR CIRCUIT
审中-公开
光传感器电路，用于驱动光传感器电路的显示装置和方法
- 专利标题： OPTICAL SENSOR CIRCUIT, DISPLAY DEVICE AND METHOD FOR DRIVING OPTICAL SENSOR CIRCUIT
- 专利标题（中）： 光传感器电路，用于驱动光传感器电路的显示装置和方法
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申请号： US13258775申请日： 2009-10-27
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公开(公告)号： US20120019496A1公开(公告)日： 2012-01-26
- 发明人: Atsuhito Murai , Yoshiharu Kataoka , Takuya Watanabe , Hajime Imai , Hideki Kitagawa
- 申请人： Atsuhito Murai , Yoshiharu Kataoka , Takuya Watanabe , Hajime Imai , Hideki Kitagawa
- 申请人地址： JP Osaka-shi
- 专利权人： Sharp Kabushiki Kaisha
- 当前专利权人： Sharp Kabushiki Kaisha
- 当前专利权人地址： JP Osaka-shi
- 优先权： JP2009-083451 20090330
- 国际申请： PCT/JP2009/068419 WO 20091027
- 主分类号： G09G5/00
- IPC分类号： G09G5/00 ; H01L31/0368 ; H01L29/786 ; H01L31/0376
摘要：
A field-effect transistor (62a) has a back gate (62ag2). The back gate (62ag2), a cathode of a photodiode (62b), and a first end of a first capacitor (62c) are connected with each other via a first node (netA). An anode of the photodiode (62b) is connected with a first line (Vrst). A second end of the first capacitor (62c) is connected with a second line (Csn). A gate (62ag1) of the field-effect transistor (62a) is connected with a third line (Vrwn), and a drain of the filed-effect transistor (62a) is connected with a fourth line (Vsm). A source of the field-effect transistor (62a) is an output of an output amplifier (62a).