Invention Application
- Patent Title: PILLAR TYPE CAPACITOR OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
- Patent Title (中): 半导体器件的支柱型电容器及其形成方法
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Application No.: US12979926Application Date: 2010-12-28
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Publication No.: US20120019980A1Publication Date: 2012-01-26
- Inventor: Ho Jin CHO , Cheol Hwan PARK , Dong Kyun LEE
- Applicant: Ho Jin CHO , Cheol Hwan PARK , Dong Kyun LEE
- Applicant Address: KR Icheon-si
- Assignee: HYNIX SEMICONDUCTOR INC.
- Current Assignee: HYNIX SEMICONDUCTOR INC.
- Current Assignee Address: KR Icheon-si
- Priority: KR10-2010-0070128 20100720
- Main IPC: H01G4/06
- IPC: H01G4/06 ; H01L21/02
Abstract:
An embodiment of the invention includes a pillar type capacitor where a pillar is formed over an upper portion of a storage node contact. A bottom electrode is formed over sidewalls of the pillar, and a dielectric film is formed over pillar and the bottom electrode. A top electrode is then formed over the upper portion of the dielectric film.
Public/Granted literature
- US08470668B2 Method for forming pillar type capacitor of semiconductor device Public/Granted day:2013-06-25
Information query
