发明申请
- 专利标题： METHOD OF MANUFACTURING POLYCRYSTALLINE SILICON LAYER, AND METHOD OF MANUFACTURING TRANSISTOR HAVING THE POLYCRYSTALLINE SILICON LAYER
- 专利标题（中）： 制造多晶硅层的方法以及制造具有多晶硅层的晶体管的方法
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申请号： US13186974申请日： 2011-07-20
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公开(公告)号： US20120021585A1公开(公告)日： 2012-01-26
- 发明人: Young-Jin CHANG , Jae-Hwan OH , Won-Kyu LEE , Seong-Hyun JIN , Jae-Beom CHOI
- 申请人： Young-Jin CHANG , Jae-Hwan OH , Won-Kyu LEE , Seong-Hyun JIN , Jae-Beom CHOI
- 优先权： KR10-2010-0071598 20100723
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/336
摘要：
An embodiment is directed to a method of manufacturing a polycrystalline silicon layer, the method including providing a crystallization substrate, the crystallization substrate having an amorphous silicon layer on a first substrate, providing a reflection substrate, the reflection substrate having a first region with a reflection panel therein and a second region without the reflection panel, disposing the crystallization substrate and the reflection substrate on one another, and selectively crystallizing the amorphous silicon layer by directing a laser beam onto the crystallization substrate and the reflection substrate, and reflecting the laser beam from the reflection panel.
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