发明申请
- 专利标题: MULTI-GAS STRAIGHT CHANNEL SHOWERHEAD
- 专利标题(中): 多通道直通通道
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申请号: US13181431申请日: 2011-07-12
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公开(公告)号: US20120024388A1公开(公告)日: 2012-02-02
- 发明人: Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
- 申请人: Brian H. Burrows , Alexander Tam , Ronald Stevens , Kenric T. Choi , James D. Felsch , Jacob Grayson , Sumedh Acharya , Sandeep Nijhawan , Lori D. Washington , Nyi O. Myo
- 主分类号: F16L37/56
- IPC分类号: F16L37/56
摘要:
A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.
公开/授权文献
- US08481118B2 Multi-gas straight channel showerhead 公开/授权日:2013-07-09