发明申请
US20120025312A1 Strain Engineering in Three-Dimensional Transistors Based on a Strained Channel Semiconductor Material
审中-公开
基于应变通道半导体材料的三维晶体管中的应变工程
- 专利标题： Strain Engineering in Three-Dimensional Transistors Based on a Strained Channel Semiconductor Material
- 专利标题（中）： 基于应变通道半导体材料的三维晶体管中的应变工程
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申请号： US13164928申请日： 2011-06-21
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公开(公告)号： US20120025312A1公开(公告)日： 2012-02-02
- 发明人: Thilo Scheiper , Stefan Flachowsky , Jan Hoentschel
- 申请人： Thilo Scheiper , Stefan Flachowsky , Jan Hoentschel
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 优先权： DE102010038742.8 20100730
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L21/336
摘要：
In three-dimensional transistor configurations, such as finFETs, at least one surface of the semiconductor fin may be provided with a strained semiconductor material, which may thus have a pronounced uniaxial strain component along the current flow direction. The strained semiconductor material may be provided at any appropriate manufacturing stage, for instance, prior to actually patterning the semiconductor fins and/or after the patterning the semiconductor fins, thereby providing superior performance and flexibility in adjusting the overall characteristics of three-dimensional transistors.
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