发明申请
US20120028470A1 Increasing Robustness of a Dual Stress Liner Approach in a Semiconductor Device by Applying a Wet Chemistry
有权
通过应用湿式化学在半导体器件中提高双应力衬里方法的鲁棒性
- 专利标题： Increasing Robustness of a Dual Stress Liner Approach in a Semiconductor Device by Applying a Wet Chemistry
- 专利标题（中）： 通过应用湿式化学在半导体器件中提高双应力衬里方法的鲁棒性
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申请号： US13034777申请日： 2011-02-25
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公开(公告)号： US20120028470A1公开(公告)日： 2012-02-02
- 发明人: Ralf Richter , Markus Lenski , Torsten Huisinga
- 申请人： Ralf Richter , Markus Lenski , Torsten Huisinga
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人： GLOBALFOUNDRIES INC.
- 当前专利权人地址： KY Grand Cayman
- 优先权： DE102010038744.4 20100730
- 主分类号： H01L21/306
- IPC分类号： H01L21/306
摘要：
In a dual stress liner approach, unwanted material provided between closely spaced gate electrode structures may be removed to a significant degree on the basis of a wet chemical etch process, thereby reducing the risk of creating patterning-related irregularities. Consequently, the probability of contact failures in sophisticated interlayer dielectric material systems formed on the basis of a dual stress liner approach may be reduced.
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