发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13052152申请日： 2011-03-21
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公开(公告)号： US20120032243A1公开(公告)日： 2012-02-09
- 发明人: Hiroyuki KUTSUKAKE , Yoshiko Kato , Yoshihisa Watanabe , Koichi Fukuda , Kazunori Masuda
- 申请人： Hiroyuki KUTSUKAKE , Yoshiko Kato , Yoshihisa Watanabe , Koichi Fukuda , Kazunori Masuda
- 优先权： JP2010-175693 20100804
- 主分类号： H01L29/94
- IPC分类号： H01L29/94
摘要：
According to one embodiment, a semiconductor device includes at least one semiconductor region provided in a semiconductor substrate, and a capacitor group including a plurality of capacitors provided in the semiconductor region, each capacitor including a capacitor insulating film provided on the semiconductor region, a capacitor electrode provided on the capacitor insulating film, and at least one diffusion layer provided in the semiconductor region adjacent to the capacitor electrode.
公开/授权文献
- US08791517B2 Semiconductor device 公开/授权日：2014-07-29
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