Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件
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Application No.: US13052152Application Date: 2011-03-21
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Publication No.: US20120032243A1Publication Date: 2012-02-09
- Inventor: Hiroyuki KUTSUKAKE , Yoshiko Kato , Yoshihisa Watanabe , Koichi Fukuda , Kazunori Masuda
- Applicant: Hiroyuki KUTSUKAKE , Yoshiko Kato , Yoshihisa Watanabe , Koichi Fukuda , Kazunori Masuda
- Priority: JP2010-175693 20100804
- Main IPC: H01L29/94
- IPC: H01L29/94
Abstract:
According to one embodiment, a semiconductor device includes at least one semiconductor region provided in a semiconductor substrate, and a capacitor group including a plurality of capacitors provided in the semiconductor region, each capacitor including a capacitor insulating film provided on the semiconductor region, a capacitor electrode provided on the capacitor insulating film, and at least one diffusion layer provided in the semiconductor region adjacent to the capacitor electrode.
Public/Granted literature
- US08791517B2 Semiconductor device Public/Granted day:2014-07-29
Information query
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