发明申请
- 专利标题： SEMICONDUCTOR DEVICES
- 专利标题（中）： 半导体器件
-
申请号： US13182269申请日： 2011-07-13
-
公开(公告)号： US20120032250A1公开(公告)日： 2012-02-09
- 发明人: Yong-Hoon SON , Sung-Min HWANG , Kihyun HWANG , Jaehoon JANG
- 申请人： Yong-Hoon SON , Sung-Min HWANG , Kihyun HWANG , Jaehoon JANG
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2010-0067528 20100713
- 主分类号： H01L29/792
- IPC分类号： H01L29/792
摘要：
A semiconductor device can include a first substrate and conductive patterns on the first substrate, where the conductive patterns are disposed in stacks vertically extending from the substrate. An active pillar can be on the first substrate vertically extend from the first substrate through the conductive patterns to provide vertical string transistors on the first substrate. A second substrate can be on the conductive patterns and the active pillar opposite the first substrate. A peripheral circuit transistor can be on the second substrate opposite the first substrate, where the peripheral circuit transistor can be adjacent to and overlap an uppermost pattern of the conductive patterns.
信息查询
IPC分类:
