发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13280397申请日： 2011-10-25
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公开(公告)号： US20120034712A1公开(公告)日： 2012-02-09
- 发明人: Wensheng Wang
- 申请人： Wensheng Wang
- 申请人地址： JP Yokohama-shi
- 专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人： FUJITSU SEMICONDUCTOR LIMITED
- 当前专利权人地址： JP Yokohama-shi
- 主分类号： H01L43/12
- IPC分类号： H01L43/12
摘要：
A method for manufacturing a semiconductor device including a ferroelectric capacitor formed over a semiconductor substrate, wherein the ferroelectric capacitor including a lower electrode, a ferroelectric film formed on the lower electrode, and an upper electrode formed on the ferroelectric film, and the upper electrode including a first conductive film formed of a first conductive noble metal oxide, and a second conductive film formed of a metal nitride compound formed on the first conductive film.
公开/授权文献
- US08278181B2 Semiconductor device and method of manufacturing the same 公开/授权日：2012-10-02
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