发明申请
US20120034761A1 METHOD OF REMOVING CONTAMINANTS AND NATIVE OXIDES FROM A SUBSTRATE SURFACE
有权
从基底表面去除污染物和原生氧化物的方法
- 专利标题: METHOD OF REMOVING CONTAMINANTS AND NATIVE OXIDES FROM A SUBSTRATE SURFACE
- 专利标题(中): 从基底表面去除污染物和原生氧化物的方法
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申请号: US13177409申请日: 2011-07-06
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公开(公告)号: US20120034761A1公开(公告)日: 2012-02-09
- 发明人: Satheesh Kuppurao , Manish Hemkar , Vinh Tran , Yihwan Kim
- 申请人: Satheesh Kuppurao , Manish Hemkar , Vinh Tran , Yihwan Kim
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L21/322
- IPC分类号: H01L21/322
摘要:
Embodiments of the present invention generally relate to methods for removing contaminants and native oxides from substrate surfaces. The methods generally include exposing a substrate having an oxide layer thereon to an oxidizing source. The oxidizing source oxidizes an upper portion of the substrate beneath the oxide layer to form an oxide layer having an increased thickness. The oxide layer with the increased thickness is then removed to expose a clean surface of the substrate. The removal of the oxide layer generally includes removal of contaminants present in and on the oxide layer, especially those contaminants present at the interface of the oxide layer and the substrate. An epitaxial layer may then be formed on the clean surface of the substrate.