Invention Application
- Patent Title: Double Patterning Strategy for Contact Hole and Trench in Photolithography
- Patent Title (中): 接触孔和沟槽在光刻中的双重图案化策略
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Application No.: US13274840Application Date: 2011-10-17
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Publication No.: US20120034778A1Publication Date: 2012-02-09
- Inventor: Feng-Cheng Hsu , Jian-Hong Chen
- Applicant: Feng-Cheng Hsu , Jian-Hong Chen
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Main IPC: H01L21/302
- IPC: H01L21/302 ; G03F7/20
Abstract:
A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern including at least one opening therein on the substrate; and removing the first resist pattern to uncover the substrate underlying the first resist pattern.
Public/Granted literature
- US08450052B2 Double patterning strategy for contact hole and trench in photolithography Public/Granted day:2013-05-28
Information query
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