发明申请
- 专利标题： SEMICONDUCTOR DEVICE
- 专利标题（中）： 半导体器件
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申请号： US13210950申请日： 2011-08-16
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公开(公告)号： US20120043588A1公开(公告)日： 2012-02-23
- 发明人: Akio IWABUCHI , Hironori Aoki
- 申请人： Akio IWABUCHI , Hironori Aoki
- 申请人地址： JP Niiza-shi
- 专利权人： Sanken Electric Co., Ltd.
- 当前专利权人： Sanken Electric Co., Ltd.
- 当前专利权人地址： JP Niiza-shi
- 优先权： JPP2010-185780 20100823
- 主分类号： H01L29/778
- IPC分类号： H01L29/778
摘要：
A semiconductor device includes: a first semiconductor layer; a second semiconductor layer; a two-dimensional carrier gas layer; a source electrode; a drain electrode; a gate electrode; and an auxiliary electrode located above the two-dimensional carrier gas layer between the gate electrode and the drain electrode. Channel resistance of the two-dimensional carrier gas layer between the gate electrode and the auxiliary electrode is set higher than channel resistance of the two-dimensional carrier gas layer between the gate electrode and the source electrode.
公开/授权文献
- US08823061B2 Semiconductor device 公开/授权日：2014-09-02
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