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发明申请
US20120043609A1 HIGH-VOLTAGE TRANSISTOR ARCHITECTURES, PROCESSES OF FORMING SAME, AND SYSTEMS CONTAINING SAME 有权
高电压晶体管结构，其形成方法和包含其的系统

HIGH-VOLTAGE TRANSISTOR ARCHITECTURES, PROCESSES OF FORMING SAME, AND SYSTEMS CONTAINING SAME
摘要：
An apparatus includes a first device with a metal gate and a drain well that experiences a series resistance that drops a drain contact voltage from 10 V to 4-6 V at a junction between the drain well and a channel under the gate. The apparatus includes an interlayer dielectric layer (ILD0) disposed above and on the drain well and a salicide drain contact in the drain well. The apparatus also includes a subsequent device that is located in a region different from the first device that operates at a voltage lower than the first device.
摘要（中）：

一种装置包括具有金属栅极和漏极阱的第一器件，其经受在漏极阱和栅极之下的沟道之间的接点处的漏极接触电压从10V降低至4-6V的串联电阻。 该装置包括设置在排水井上方和排水井上的层间电介质层（ILD0）和排水井中的自对准硅排放接头。 该设备还包括位于与低于第一设备的电压工作的第一设备不同的区域中的后续设备。

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