发明申请
- 专利标题: LIGHT EMITTING DIODE WITH IMPROVED LUMINOUS EFFICIENCY
- 专利标题(中): 发光二极管具有提高的光效
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申请号: US13209765申请日: 2011-08-15
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公开(公告)号: US20120049223A1公开(公告)日: 2012-03-01
- 发明人: Jeong Hee YANG , Kyoung Wan KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Duk Il SUH , Keum Ju LEE , Jin Woong LEE , Da Yeon JEONG
- 申请人: Jeong Hee YANG , Kyoung Wan KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Duk Il SUH , Keum Ju LEE , Jin Woong LEE , Da Yeon JEONG
- 申请人地址: KR Ansan-si
- 专利权人: SEOUL OPTO DEVICE CO., LTD.
- 当前专利权人: SEOUL OPTO DEVICE CO., LTD.
- 当前专利权人地址: KR Ansan-si
- 优先权: KR10-2010-0083480 20100827; KR10-2010-0096016 20101001
- 主分类号: H01L33/58
- IPC分类号: H01L33/58 ; H01L33/42
摘要:
Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.
公开/授权文献
- US08878220B2 Light emitting diode with improved luminous efficiency 公开/授权日:2014-11-04
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