发明申请
US20120049317A1 SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURES INCLUDING GRADIENT NITRIDED BURIED OXIDE (BOX)
有权
半导体绝缘体（SOI）结构，包括梯度氮化氧化物（BOX）
- 专利标题： SEMICONDUCTOR-ON-INSULATOR (SOI) STRUCTURES INCLUDING GRADIENT NITRIDED BURIED OXIDE (BOX)
- 专利标题（中）： 半导体绝缘体（SOI）结构，包括梯度氮化氧化物（BOX）
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申请号： US13290634申请日： 2011-11-07
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公开(公告)号： US20120049317A1公开(公告)日： 2012-03-01
- 发明人: Anthony I. Chou , Toshiharu Furukawa , Wilfried Haensch , Zhibin Ren , Dinkar V. Singh , Jeffrey W. Sleight
- 申请人： Anthony I. Chou , Toshiharu Furukawa , Wilfried Haensch , Zhibin Ren , Dinkar V. Singh , Jeffrey W. Sleight
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/12
- IPC分类号： H01L29/12
摘要：
A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the interface of the buried dielectric layer with at least one of the base semiconductor substrate and surface semiconductor layer. The interface of the buried dielectric layer with the at least one of the base semiconductor substrate and surface semiconductor layer is abrupt, providing a transition in less than about 5 atomic layer thickness, and having less than about 10 angstroms RMS interfacial roughness. A second dielectric layer comprising an oxide dielectric material absent nitrogen may be located interposed between the buried dielectric layer and the surface semiconductor layer.