发明申请
US20120051154A1 FUSE CIRCUIT, FUSE ARRAY, SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
有权
保险丝电路，保险丝阵列，半导体存储器件及制造半导体器件的方法
- 专利标题： FUSE CIRCUIT, FUSE ARRAY, SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 保险丝电路，保险丝阵列，半导体存储器件及制造半导体器件的方法
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申请号： US13219749申请日： 2011-08-29
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公开(公告)号： US20120051154A1公开(公告)日： 2012-03-01
- 发明人: Jong-Pil SON , Seong-Jin Jang , Byung-Sik Moon , Hyuck-Chai Jung , Ju-Seop Park
- 申请人： Jong-Pil SON , Seong-Jin Jang , Byung-Sik Moon , Hyuck-Chai Jung , Ju-Seop Park
- 申请人地址： KR Suwon-si
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR10-2010-0083211 20100827
- 主分类号： G11C17/16
- IPC分类号： G11C17/16 ; G11C7/00 ; H01L27/088 ; G11C29/04 ; H01L21/8236
摘要：
A fuse circuit includes a program unit and a sensing unit. The program unit is programmed in response to a program signal and outputs a program output signal in response to a sensing enable signal. The sensing unit outputs a sensing output signal based on the program output signal and the sensing output signal indicates whether the program unit is programmed or not. The program unit includes an anti-fuse cell, a selection transistor, a program transistor and a sensing transistor. The anti-fuse cell includes at least two anti-fuse elements which are connected in parallel and are respectively broken down at different levels of a program voltage.
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