发明申请
- 专利标题： SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13214462申请日： 2011-08-22
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公开(公告)号： US20120052674A1公开(公告)日： 2012-03-01
- 发明人: Jaegoo LEE , Youngwoo Park , Jungdal Choi
- 申请人： Jaegoo LEE , Youngwoo Park , Jungdal Choi
- 优先权： KR10-2010-0084222 20100830
- 主分类号： H01L21/8239
- IPC分类号： H01L21/8239
摘要：
A method of fabricating a semiconductor memory device includes forming a mold stack on a substrate and the mold stack including first sacrificial layers and second sacrificial layers alternately stacked on the substrate. The method also includes forming a plurality of vertical channels that penetrate the mold stack and that contact the substrate, patterning the mold stack to form word line cuts between the vertical channels, the word line cuts exposing the substrate, removing one of the first and second sacrificial layers to form recessed regions in the mold stack, forming a data storage layer, at least a portion of the data storage layer being formed between the vertical channels and the gates, forming gates in the recessed regions, forming air gaps between the gates by removing the other of the first and second sacrificial layers, and forming an insulation layer pattern in the word line cuts.
公开/授权文献
- US08822322B2 Semiconductor devices and methods of fabricating the same 公开/授权日：2014-09-02
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