SUBSTRATE FABRICATING APPARATUS AND SUBSTRATE FABRICATING METHOD

Invention Application

US20120055901A1 SUBSTRATE FABRICATING APPARATUS AND SUBSTRATE FABRICATING METHOD 审中-公开

Title translation: 基板制作装置和基板制造方法

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Patent Title: SUBSTRATE FABRICATING APPARATUS AND SUBSTRATE FABRICATING METHOD
Patent Title (中): 基板制作装置和基板制造方法
Application No.: US12987812

Application Date: 2011-01-10
Publication No.: US20120055901A1

Publication Date: 2012-03-08
Inventor: Chang Bo Lee , Cheol Ho Choi , Dae Jo Hong
Applicant: Chang Bo Lee , Cheol Ho Choi , Dae Jo Hong
Applicant Address: KR Gyunggi-do
Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
Current Assignee Address: KR Gyunggi-do
Priority: KR1020100086024 20100902
Main IPC: H01L21/306
IPC: H01L21/306

SUBSTRATE FABRICATING APPARATUS AND SUBSTRATE FABRICATING METHOD

Abstract:

Disclosed herein are a substrate fabricating apparatus and a substrate fabricating method. The substrate fabricating apparatus includes: a first injector that injects a first etchant to a circuit layer formed as an outermost layer of a base substrate to form first type of ruggedness; and a second injector that injects a second etchant to the circuit layer formed with the first type of ruggedness to form second type of ruggedness. The present invention provides the substrate fabricating apparatus and the substrate fabricating method that inject different etchants to the circuit layer to form different ruggedness, thereby making it possible to widen the specific surface area of the circuit layer to improve adhesion between the circuit layer and the protective layer.

Abstract(Chinese):

本文公开了一种基板制造装置和基板制造方法。基板制造装置包括：第一注入器，其将第一蚀刻剂注入形成为基底基板的最外层的电路层，以形成第一类型的凹凸; 以及第二喷射器，其将第二蚀刻剂喷射到形成有第一类型的凹凸的电路层，以形成第二类型的凹凸。本发明提供了一种衬底制造装置和衬底制造方法，其将不同的蚀刻剂注入电路层以形成不同的粗糙度，从而可以拓宽电路层的比表面积，从而提高电路层与保护层之间的粘附性层。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/302	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/306	......化学或电处理，例如电解腐蚀（形成绝缘层的入H01L21/31；绝缘层的后处理入H01L21/3105）