发明申请
US20120056147A1 LARGE ARRAY OF UPWARD POINTINIG P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT
有权
具有大电流和均匀电流的上升点阵电位器P-I-N二极管
- 专利标题： LARGE ARRAY OF UPWARD POINTINIG P-I-N DIODES HAVING LARGE AND UNIFORM CURRENT
- 专利标题（中）： 具有大电流和均匀电流的上升点阵电位器P-I-N二极管
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申请号： US13294224申请日： 2011-11-11
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公开(公告)号： US20120056147A1公开(公告)日： 2012-03-08
- 发明人: S. Brad Herner
- 申请人： S. Brad Herner
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A circuit is provided that includes a plurality of vertically oriented p-i-n diodes. Each p-i-n diode is coupled to a resistivity-switching element and includes a bottom heavily doped p-type region. When a voltage between about 1.5 volts and about 3.0 volts is applied across each p-i-n diode, a current of at least 1.5 microamps flows through 99 percent of the p-i-n diodes. Numerous other aspects are also provided.
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