Invention Application
- Patent Title: SEMICONDUCTOR COMPOUND STRUCTURE AND METHOD OF FABRICATING THE SAME USING GRAPHENE OR CARBON NANOTUBES, AND SEMICONDUCTOR DEVICE INCLUDING THE SEMICONDUCTOR COMPOUND STRUCTURE
- Patent Title (中): 半导体化合物结构及其使用石墨或碳纳米管制备其的方法，以及包括半导体复合结构的半导体器件
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Application No.: US13095122Application Date: 2011-04-27
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Publication No.: US20120056237A1Publication Date: 2012-03-08
- Inventor: Jun-hee CHOI , Un-jeong KIM , Sang-jin LEE
- Applicant: Jun-hee CHOI , Un-jeong KIM , Sang-jin LEE
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2010-0086586 20100903
- Main IPC: H01L33/30
- IPC: H01L33/30 ; H01L29/20 ; H01L21/20
Abstract:
A semiconductor compound structure and a method of fabricating the semiconductor compound structure using graphene or carbon nanotubes, and a semiconductor device including the semiconductor compound structure. The semiconductor compound structure includes a substrate; a buffer layer disposed on the substrate, and formed of a material including carbons having hexagonal crystal structures; and a semiconductor compound layer grown and formed on the buffer layer.
Public/Granted literature
Information query
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