Invention Application
- Patent Title: SEMICONDUCTOR DEVICE INTEGRATED WITH CONVERTER AND PACKAGE STRUCTURE THEREOF
- Patent Title (中): 集成转换器的半导体器件及其封装结构
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Application No.: US13013832Application Date: 2011-01-26
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Publication No.: US20120056277A1Publication Date: 2012-03-08
- Inventor: Wei-Chieh Lin
- Applicant: Wei-Chieh Lin
- Priority: TW099129674 20100902
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L23/495
Abstract:
The present invention provides a semiconductor device including a semiconductor substrate having a first conductive type, at least one high-side transistor device and at least one low-side transistor device. The high-side transistor device includes a doped high-side base region having a second conductive type, a doped high-side source region having the first conductive type and a doped drain region having the first conductive type. The doped high-side base region is disposed within the semiconductor substrate, and the doped high-side source region and the doped drain region are disposed within the doped high-side base region. The doped high-side source region is electrically connected to the semiconductor substrate, and the semiconductor substrate is regarded as a drain of the low-side transistor device.
Public/Granted literature
- US08426914B2 Semiconductor device integrated with converter and package structure thereof Public/Granted day:2013-04-23
Information query
IPC分类:
