发明申请
US20120057386A1 SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND POWER CONVERTER
有权
半导体元件,半导体器件和电源转换器
- 专利标题: SEMICONDUCTOR ELEMENT, SEMICONDUCTOR DEVICE, AND POWER CONVERTER
- 专利标题(中): 半导体元件,半导体器件和电源转换器
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申请号: US13266271申请日: 2010-04-28
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公开(公告)号: US20120057386A1公开(公告)日: 2012-03-08
- 发明人: Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
- 申请人: Kazuhiro Adachi , Osamu Kusumoto , Masao Uchida , Koichi Hashimoto , Shun Kazama
- 申请人地址: JP Osaka
- 专利权人: PANASONIC CORPORATION
- 当前专利权人: PANASONIC CORPORATION
- 当前专利权人地址: JP Osaka
- 优先权: JPPCT/JP2009/001960 20090430
- 国际申请: PCT/JP2010/003062 WO 20100428
- 主分类号: H02M7/537
- IPC分类号: H02M7/537 ; H01L29/24
摘要:
A semiconductor element 100 including an MISFET according to the present invention is characterized by having diode characteristics in a reverse direction through an epitaxial channel layer 50. The semiconductor element 100 includes a silicon carbide semiconductor substrate 10 of a first conductivity type, a semiconductor layer 20 of the first conductivity type, a body region 30 of a second conductivity type, a source region 40 of the first conductivity type, an epitaxial channel layer 50 in contact with the body region, a source electrode 45, a gate insulating film 60, a gate electrode 65 and a drain electrode 70. If the voltage applied to the gate electrode of the MISFET is smaller than a threshold voltage, the semiconductor element 100 functions as a diode in which current flows from the source electrode 45 to the drain electrode 70 through the epitaxial channel layer 50. The absolute value of the turn-on voltage of this diode is smaller than that of the turn-on voltage of a body diode that is formed of the body region and the first silicon carbide semiconductor layer.