发明申请
- 专利标题： Transistor Structure
- 专利标题（中）： 晶体管结构
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申请号： US13013828申请日： 2011-01-26
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公开(公告)号： US20120061650A1公开(公告)日： 2012-03-15
- 发明人: Chia-Chun YEH , Henry WANG , Yao-Chou TSAI , Sung-Hui HUANG
- 申请人： Chia-Chun YEH , Henry WANG , Yao-Chou TSAI , Sung-Hui HUANG
- 申请人地址： TW HSINCHU
- 专利权人： E INK HOLDINGS INC.
- 当前专利权人： E INK HOLDINGS INC.
- 当前专利权人地址： TW HSINCHU
- 优先权： TW099131063 20100914
- 主分类号： H01L51/10
- IPC分类号： H01L51/10 ; H01L51/30
摘要：
A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.
公开/授权文献
- US08350260B2 Transistor structure 公开/授权日：2013-01-08
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