发明申请
- 专利标题: SIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- 专利标题(中): SIC半导体器件及其制造方法
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申请号: US13229892申请日: 2011-09-12
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公开(公告)号: US20120061682A1公开(公告)日: 2012-03-15
- 发明人: Toshimasa Yamamoto , Masahiro Sugimoto , Hidefumi Takaya , Jun Morimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
- 申请人: Toshimasa Yamamoto , Masahiro Sugimoto , Hidefumi Takaya , Jun Morimoto , Narumasa Soejima , Tsuyoshi Ishikawa , Yukihiko Watanabe
- 申请人地址: JP Toyota-city JP Kariya-city
- 专利权人: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- 当前专利权人: TOYOTA JIDOSHA KABUSHIKI KAISHA,DENSO CORPORATION
- 当前专利权人地址: JP Toyota-city JP Kariya-city
- 优先权: JP2010-205789 20100914
- 主分类号: H01L29/24
- IPC分类号: H01L29/24 ; H01L21/336
摘要:
A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion.