发明申请
- 专利标题: SEMICONDUCTOR DEVICE, METHOD OF FABRICATING THE SAME, AND PATTERNING MASK UTILIZIED BY THE METHOD
- 专利标题(中): 半导体器件,其制造方法以及由该方法使用的掩模图案
-
申请号: US13301657申请日: 2011-11-21
-
公开(公告)号: US20120061737A1公开(公告)日: 2012-03-15
- 发明人: Yi-Chun Lin , Kuo-Ming Wu , Ruey-Hsin Liu
- 申请人: Yi-Chun Lin , Kuo-Ming Wu , Ruey-Hsin Liu
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; B32B3/00 ; H01L21/336 ; B82Y99/00
摘要:
A semiconductor device. The device comprises an active region isolated by an isolation structure on a substrate. The device further comprises a gate electrode extending across the active area and overlying the substrate, a pair of source region and drain region, disposed on either side of the gate electrode on the substrate in the active area, and a gate dielectric layer disposed between the substrate and the gate electrode. The gate dielectric layer comprises a relatively-thicker high voltage (HV) dielectric portion and a relatively-thinner low voltage (LV) dielectric portion, wherein the HV dielectric portion occupies a first intersection among the drain region, the isolation structure, and the gate electrode, and a second intersection among the source region, the isolation structure, and the gate electrode.