发明申请
- 专利标题: Methods of Forming a Pattern of Semiconductor Devices
- 专利标题(中): 形成半导体器件图案的方法
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申请号: US13222447申请日: 2011-08-31
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公开(公告)号: US20120064724A1公开(公告)日: 2012-03-15
- 发明人: Bo-hee Lee , Kyoung-mi Kim , Jeong-ju Park , Mi-ra Park , Jae-ho Kim , Young-ho Kim
- 申请人: Bo-hee Lee , Kyoung-mi Kim , Jeong-ju Park , Mi-ra Park , Jae-ho Kim , Young-ho Kim
- 优先权: KR10-2010-0089920 20100914
- 主分类号: H01L21/308
- IPC分类号: H01L21/308
摘要:
Methods of forming a pattern of a semiconductor device including performing a double patterning process without using an atomic layer deposition (ALD) oxide film are provided. The methods may include forming a mask pattern on a substrate; forming a chemical attach process (CAP) material layer covering at least a portion of the mask pattern; forming a CAP adhesive layer by adhering at least a portion of the CAP material layer to the mask pattern by using a first baking process and a first development process; forming an interlayer covering at least a portion of the mask pattern and the CAP adhesive layer; and removing the mask pattern and the interlayer while allowing the CAP adhesive layer to remain by using a second baking process and a second development process.