发明申请
- 专利标题： REVERSE CONDUCTING-INSULATED GATE BIPOLAR TRANSISTOR
- 专利标题（中）： 反向导电绝缘栅双极晶体管
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申请号： US13235154申请日： 2011-09-16
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公开(公告)号： US20120068220A1公开(公告)日： 2012-03-22
- 发明人: Toshiaki KOBAYASHI , Masakazu Kobayashi
- 申请人： Toshiaki KOBAYASHI , Masakazu Kobayashi
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 优先权： JPP2010-211009 20100921
- 主分类号： H01L29/747
- IPC分类号： H01L29/747
摘要：
According to one embodiment, in a reverse conducting-insulated gate bipolar transistor, the buffer layer is provided on the backside of the second base layer, has a higher impurity concentration in comparison with the second base layer. The first collector layer is in contact with a portion of the backside of the buffer layer, has a higher impurity concentration in comparison with the second base layer. The second collector layer is in contact with a portion of the backside of the buffer layer, is provided so as to surround the first collector layer, has a higher impurity concentration in comparison with the first base layer. The third collector layer is in contact with a portion of the backside of the buffer layer, is provided so as to surround the second collector layer, has a higher impurity concentration in comparison with the second collector layer.
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