发明申请
US20120075604A1 Methods and Systems for Evaluating Extreme Ultraviolet Mask Flatness 有权
评估极紫外线平坦度的方法和系统

  • 专利标题: Methods and Systems for Evaluating Extreme Ultraviolet Mask Flatness
  • 专利标题(中): 评估极紫外线平坦度的方法和系统
  • 申请号: US13239052
    申请日: 2011-09-21
  • 公开(公告)号: US20120075604A1
    公开(公告)日: 2012-03-29
  • 发明人: Gian Francesco LorussoSang Lee
  • 申请人: Gian Francesco LorussoSang Lee
  • 申请人地址: BE Leuven
  • 专利权人: IMEC
  • 当前专利权人: IMEC
  • 当前专利权人地址: BE Leuven
  • 优先权: EP10194072.4 20101208
  • 主分类号: G03B27/54
  • IPC分类号: G03B27/54
Methods and Systems for Evaluating Extreme Ultraviolet Mask Flatness
摘要:
Disclosed are methods and systems for determining a topography of a lithographic optical element and/or a holder of a lithographic optical element. In one embodiment, the method includes directing electromagnetic radiation towards a lithographic optical element, where the electromagnetic radiation comprises electromagnetic radiation in a first predetermined wavelength range and electromagnetic radiation in a second predetermined wavelength range. The method further includes using the lithographic optical element to adsorb the electromagnetic radiation in the first predetermined wavelength range, and to reflect at least a portion of the electromagnetic radiation in the second predetermined wavelength range towards a substrate comprising a photosensitive layer, thereby exposing the photosensitive layer to form an exposed photosensitive layer. The method still further includes performing an evaluation of the exposed photosensitive layer and, based on the evaluation, determining a topography of the lithographic optical element.
信息查询
0/0