发明申请
- 专利标题： Resistance Based Memory Having Two-Diode Access Device
- 专利标题（中）： 具有二极管接入设备的电阻式存储器
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申请号： US12892237申请日： 2010-09-28
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公开(公告)号： US20120075906A1公开(公告)日： 2012-03-29
- 发明人: Wuyang Ho , Jungwon Suh , Kangho Lee , Tae Hyun Kim , Jung Pill Kim , Seung H. Kang
- 申请人： Wuyang Ho , Jungwon Suh , Kangho Lee , Tae Hyun Kim , Jung Pill Kim , Seung H. Kang
- 申请人地址： US CA San Diego
- 专利权人： QUALCOMM INCORPORATED
- 当前专利权人： QUALCOMM INCORPORATED
- 当前专利权人地址： US CA San Diego
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C7/00
摘要：
A resistance-based memory has a two-diode access device. In a particular embodiment, a method includes biasing a bit line and a sense line to generate a current through a resistance-based memory element via a first diode or a second diode. A cathode of the first diode is coupled to the bit line and an anode of the second diode is coupled to the sense line.
公开/授权文献
- US08638590B2 Resistance based memory having two-diode access device 公开/授权日：2014-01-28
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