发明申请
US20120075943A1 Method and Apparatus for Memory Repair With Redundant Columns
审中-公开
用冗余列进行内存修复的方法和装置
- 专利标题： Method and Apparatus for Memory Repair With Redundant Columns
- 专利标题（中）： 用冗余列进行内存修复的方法和装置
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申请号： US12893235申请日： 2010-09-29
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公开(公告)号： US20120075943A1公开(公告)日： 2012-03-29
- 发明人: Chia-Jung Chen , Su-Chueh Lo , Chin-Hung Chang , Chen-Chia Fan , Kuen-Long Chang
- 申请人： Chia-Jung Chen , Su-Chueh Lo , Chin-Hung Chang , Chen-Chia Fan , Kuen-Long Chang
- 申请人地址： TW Hsinchu
- 专利权人： Macronix International Co., Ltd.
- 当前专利权人： Macronix International Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： G11C29/04
- IPC分类号： G11C29/04
摘要：
A first redundant column is used to repair multiple defects in an array of memory cells. The defects include at least a first defect and a second defect in different main columns of a plurality of main columns in the array. However, all of the multiple defects repaired by the first redundant column are not required to be in different main columns. The array is arranged into a plurality of rows accessed by row addresses and the plurality of main columns accessed by column addresses.
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