发明申请
- 专利标题: STRUCTURE RESULTING FROM CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING)
- 专利标题(中): BARC(底部防反射涂层)化学收缩过程的结构
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申请号: US13311638申请日: 2011-12-06
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公开(公告)号: US20120076982A1公开(公告)日: 2012-03-29
- 发明人: Todd Christopher Bailey , Colin J. Brodsky , Allen H. Gabor
- 申请人: Todd Christopher Bailey , Colin J. Brodsky , Allen H. Gabor
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: B32B3/24
- IPC分类号: B32B3/24 ; G03F7/11
摘要:
A structure. The structure includes: a hole layer; a hole layer including a top hole layer surface, wherein the hole layer has a thickness in a first direction that is perpendicular to the hole layer surface; a bottom antireflective coating (BARC) layer on and in direct physical contact with the hole layer at the top hole layer surface; a photoresist layer on and in direct physical contact with the BARC layer, wherein a continuous hole in the first direction extends completely through the photoresist layer, the BARC layer, and the hole layer; and a polymerized hole shrinking region in direct physical contact with the photoresist layer at a lateral surface of the photoresist layer and with the hole layer at the top hole layer surface, wherein the hole shrinking region does not extend below the hole layer surface in a direction from the BARC layer to the hole layer.
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