发明申请
- 专利标题: METHOD AND SYSTEM FOR ADAPTIVE CODING IN FLASH MEMORIES
- 专利标题(中): 闪存中自适应编码的方法和系统
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申请号: US13311599申请日: 2011-12-06
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公开(公告)号: US20120079178A1公开(公告)日: 2012-03-29
- 发明人: Simon LITSYN , Eran Sharon , Idan Alrod
- 申请人: Simon LITSYN , Eran Sharon , Idan Alrod
- 主分类号: G06F12/02
- IPC分类号: G06F12/02
摘要:
To store bits in one or more cells, an adaptive mapping of bits to ranges of a physical parameter of the cell(s) is provided, in accordance with respective initial values of the physical parameter, by steps including encoding the bits as a codeword by partitioning the bits into subsets and finding a factor bit string such that the codeword is a concatenation of the factor bit string and separate Galois field products of all the subsets with the factor bit string. The initial values of the physical parameter are adjusted accordingly as needed.
公开/授权文献
- US08671327B2 Method and system for adaptive coding in flash memories 公开/授权日:2014-03-11
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