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发明申请
US20120080059A1 ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS 有权
使用这些方法的超临界流体和室系统的蚀刻，清洁和干燥方法

ETCHING, CLEANING AND DRYING METHODS USING SUPERCRITICAL FLUID AND CHAMBER SYSTEMS USING THESE METHODS
摘要：
Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.
摘要（中）：

本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。 蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品 溶解 还提供了制造半导体器件的方法。

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