- 专利标题： SEMICONDUCTOR MEMORY DEVICE HAVING AN ELECTRICALLY FLOATING BODY TRANSISTOR
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申请号： US12897538申请日： 2010-10-04
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公开(公告)号： US20120081940A1公开(公告)日： 2012-04-05
- 发明人: Yuniarto Widjaja , Zvi Or-Bach
- 申请人： Yuniarto Widjaja , Zvi Or-Bach
- 申请人地址： US CA San Jose
- 专利权人： Zeno Semiconductor Inc.
- 当前专利权人： Zeno Semiconductor Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： G11C5/02
- IPC分类号： G11C5/02 ; H01L27/092
摘要：
A semiconductor memory cell is formed in a semiconductor. The semiconductor memory cell includes: a floating body region defining at least a portion of a surface of the semiconductor memory cell, the floating body region having a first conductivity type; and a buried region located within the semiconductor memory cell and located adjacent to the floating body region, wherein the buried region has a second conductivity type.
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