发明申请
- 专利标题： MEMORY ARRAY WITH GRADED RESISTANCE LINES
- 专利标题（中）： 记忆阵列与耐磨性线
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申请号： US12896641申请日： 2010-10-01
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公开(公告)号： US20120081945A1公开(公告)日： 2012-04-05
- 发明人: Jianhua Yang , John Paul Strachan , Wei Wu , Janice H. Nickel
- 申请人： Jianhua Yang , John Paul Strachan , Wei Wu , Janice H. Nickel
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L21/82
摘要：
A memory array with graded resistance lines includes a first set of lines intersecting a second set of lines. A line from one of the sets of lines includes a graded resistance along a length of the line.
公开/授权文献
- US08587985B2 Memory array with graded resistance lines 公开/授权日：2013-11-19
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