发明申请
- 专利标题: Fabrication of Replacement Metal Gate Devices
- 专利标题(中): 替代金属门装置的制造
-
申请号: US13012879申请日: 2011-01-25
-
公开(公告)号: US20120083121A1公开(公告)日: 2012-04-05
- 发明人: Takashi Ando , Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
- 申请人: Takashi Ando , Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
- 申请人地址: JP Tokyo US NY Armonk
- 专利权人: JSR CORPORATION,INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人: JSR CORPORATION,INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址: JP Tokyo US NY Armonk
- 主分类号: H01L21/463
- IPC分类号: H01L21/463
摘要:
Methods for polishing multiple dielectric layers to form replacement metal gate structures include a first chemical mechanical polish step to remove overburden and planarize a top layer to leave a planarized thickness over a gate structure. A second chemical mechanical polish step includes removal of the thickness to expose an underlying covered surface of a dielectric of the gate structure with a slurry configured to polish the top layer and the underlying covered surface substantially equally to accomplish a planar topography. A third chemical mechanical polish step is employed to remove the dielectric of the gate structure and expose a gate conductor.
公开/授权文献
- US08507383B2 Fabrication of replacement metal gate devices 公开/授权日:2013-08-13