发明申请
- 专利标题： TUNNEL FIELD EFFECT TRANSISTOR
- 专利标题（中）： 隧道场效应晶体管
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申请号： US13270898申请日： 2011-10-11
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公开(公告)号： US20120086058A1公开(公告)日： 2012-04-12
- 发明人: Gilberto Curatola , Dusan Golubovic , Johannes Josephus Theodorus Marinus Donkers , Guillaume Boccardi , Hans Mertens
- 申请人： Gilberto Curatola , Dusan Golubovic , Johannes Josephus Theodorus Marinus Donkers , Guillaume Boccardi , Hans Mertens
- 申请人地址： NL Eindhoven
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： NL Eindhoven
- 优先权： EP10187157.2 20101011
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/336
摘要：
A tunnel field effect transistor and a method of making the same. The transistor includes a semiconductor substrate. The transistor also includes a gate located on a major surface of the substrate. The transistor further includes a drain of a first conductivity type. The transistor also includes a source of a second conductivity type extending beneath the gate. The source is separated from the gate by a channel region and a gate dielectric. The transistor is operable to allow charge carrier tunnelling from an inversion layer through an upper surface of the source.
公开/授权文献
- US08963219B2 Tunnel field effect transistor 公开/授权日：2015-02-24
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