发明申请
US20120086109A1 Semiconductor Device Including Shielding Layer And Fabrication Method Thereof 有权
包括屏蔽层的半导体器件及其制造方法

Semiconductor Device Including Shielding Layer And Fabrication Method Thereof
摘要:
Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.
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