发明申请
- 专利标题: Semiconductor Device Including Shielding Layer And Fabrication Method Thereof
- 专利标题(中): 包括屏蔽层的半导体器件及其制造方法
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申请号: US13172174申请日: 2011-06-29
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公开(公告)号: US20120086109A1公开(公告)日: 2012-04-12
- 发明人: Yong-Hoon Kim , Hee-Seok Lee , Jin-Ha Jeong , Ji-Hyun Lee
- 申请人: Yong-Hoon Kim , Hee-Seok Lee , Jin-Ha Jeong , Ji-Hyun Lee
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2010-0097838 20101007
- 主分类号: H01L23/552
- IPC分类号: H01L23/552
摘要:
Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.
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